Growth mechanism of AlN on hexagonal BN/sapphire substrate by metal–organic chemical vapor deposition
Author:
Affiliation:
1. Research and Development Center for Solid State Lighting
2. Institute of Semiconductors, Chinese Academy of Sciences
3. Beijing 100083
4. China
5. University of Chinese Academy of Sciences
Abstract
The growth mechanism and dislocation behavior of AlN on monolayer hBN materials without/with O2plasma treatment by MOCVD.
Funder
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE01064H
Reference43 articles.
1. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
2. Growth and characteristics of AlGaN/GaN heterostructures on sp2-bonded BN by metal–organic chemical vapor deposition
3. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN
4. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
5. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
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