Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN-Reference-Cited by-同舟云学术

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Published:2016-04-25 Issue:17 Volume:108 Page:171106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ayari Taha¹²,Sundaram Suresh²^ORCID,Li Xin¹²,El Gmili Youssef²,Voss Paul L.¹²,Salvestrini Jean Paul²³^ORCID,Ougazzaden Abdallah¹²

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz, France

3. Université de Lorraine, LMOPS, EA 4423, 57070 Metz, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948260

Reference18 articles.

1. Theory of graphitic boron nitride nanotubes

2. Boron Nitride Nanotubes

3. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

4. A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

5. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

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