2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy-Reference-Cited by-同舟云学术

2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy

Published:2023-12-12 Issue:50 Volume:15 Page:59025-59036
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kwak Hoe-Min¹^ORCID,Kim Jongil²,Lee Je-Sung¹^ORCID,Kim Jeongwoon¹,Baik Jaeyoung¹,Choi Soo-Young¹,Shin Sunwoo¹,Kim Jin-Soo¹,Mun Seung-Hyun¹,Kim Kyung-Pil¹,Oh Sang Ho²,Lee Dong-Seon¹³^ORCID

Affiliation:

1. School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea

2. Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju 58330, Republic of Korea

3. Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Korea Institute of Energy Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c14076

Reference51 articles.

1. Heterogeneous Integrations