ICP Enhanced Cmp for Efficient and Non-Damaging Gan Polishing
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Publisher
Elsevier BV
Reference34 articles.
1. D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy;H M Kwak;ACS Appl.Mater.Interfaces,2023
2. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates
3. Damage Evolution and Removal Behaviors of GaN Crystals Involved in Double-grits Grinding;L Chen;Int. J. Extrem. Manuf,2024
4. Highly Efficient and Damage-free Polishing of GaN (0 0 0 1) by Electrochemical Etching-enhanced CMP Process;L F Zhang;Appl. Surf. Sci,2020
5. Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices;W Delmas;ACS Appl. Mater. Interfaces,2024
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