Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep05325.pdf
Reference24 articles.
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2. Akasaki, I. & Amano, H. Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters. Jpn. J. Apppl. Phys. 36, 5393 (1997).
3. Bour, D. P. et al. Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates. Appl. Phys. Lett. 76, 2182 (2000).
4. Guha, S. & Bojarczuk, N. A. Ultraviolet and violet GaN light emitting diodes on silicon. Appl. Phys. Lett. 72, 415 (1998).
5. Kobayashi, A., Fujioka, H., Ohta, J. & Oshima, M. Room temperature layer by layer growth of GaN on atomically flat ZnO. Jpn. J. Appl. Phys. 43, L53 (2004).
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