Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters-Reference-Cited by-同舟云学术

Defect-Resistant Radiative Performance ofm-Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters

Published:2016-11-24 Issue:5 Volume:29 Page:1603644
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Chichibu Shigefusa F.¹,Kojima Kazunobu¹,Uedono Akira²,Sato Yoshitaka³

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials; Tohoku University; 2-1-1 Katahira Aoba Sendai 980-8577 Japan

2. Division of Applied Physics; Faculty of Pure and Applied Sciences; University of Tsukuba; 1-1-1 Tennodai Tsukuba 305-8573 Japan

3. Futaba Corporation; 1080 Yabutsuka, Chosei-mura Chosei-gun Chiba 299-4395 Japan

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference47 articles.

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2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

3. 2014

4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

5. Solid phase immiscibility in GaInN

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