Freestanding single crystal AlN layers grown using the SiC substrate evaporation method
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE00569E
Reference18 articles.
1. Large-area AlN substrates for electronic applications: An industrial perspective
2. Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
3. Evaluation of AlN single-crystal grown by sublimation method
4. AlN bulk single crystal growth on 6H-SiC substrates by sublimation method
5. Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds
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