AlN bulk single crystal growth on 6H-SiC substrates by sublimation method-Reference-Cited by-同舟云学术

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AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

Published:2010-09 Issue:19 Volume:312 Page:2699-2704
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nagai Ichiro,Kato Tomohisa,Miura Tomonori,Kamata Hiroyuki,Naoe Kunihiro,Sanada Kazuo,Okumura Hajime

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Sublimation growth of AlN bulk crystals in Ta crucibles

2. Experimental and theoretical analysis of sublimation growth of AlN bulk crystals

3. Homoepitaxial seeding and growth of bulk AlN by sublimation

4. Similarities and differences in sublimation growth of SiC and AlN

5. Structural properties of aluminum nitride bulk single crystals grown by PVT

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1. Surface Control of AlN Single Crystal Growth on SiC Substrate;Crystal Growth & Design;2024-05-22

2. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates;physica status solidi (b);2024-04-27

3. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09

4. Morphology and crystalline property of an AlN single crystal grown on AlN seed;Journal of Semiconductors;2021-05-01

5. Comparison of the Thermal Stress Behavior of AlN Single Crystal Growth on AlN and SiC Seeds via the Physical Vapor Transport Method through Three-Dimensional Numerical Modeling and Simulation;Crystal Growth & Design;2021-04-02

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