Structural properties of aluminum nitride bulk single crystals grown by PVT
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Defects in GaN single crystals and homoepitaxial structures
2. Wet etching of GaN, AlN, and SiC: a review
3. Defect-selective etching of aluminum nitride single crystals
4. Wet KOH etching of freestanding AlN single crystals
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1. Relationship between Annealing and V/III Ratios during MNVPE of AlN Films;Crystal Growth & Design;2024-03-21
2. Fabrication of a freestanding AlN substrate via HVPE homoepitaxy on a PVT-AlN substrate;Semiconductor Science and Technology;2023-12-27
3. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09
4. Realizing overgrowth in the homo-PVT process for 2 inch AlN single crystals;CrystEngComm;2022
5. Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength;Journal of Materials Research;2021-12-14
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