Realizing overgrowth in the homo-PVT process for 2 inch AlN single crystals-Reference-Cited by-同舟云学术

Realizing overgrowth in the homo-PVT process for 2 inch AlN single crystals

Published:2022 Issue:9 Volume:24 Page:1719-1724
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Zhao Qiyue¹,Zhu Xingyu¹,Han Tong¹,Wang Zeren¹,Wu Jiejun¹,Yu Tongjun¹^ORCID

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Abstract

Large-size AlN crystal homo-PVT process is distinguished by the growth of prismatic grains in a macroscopic 3-dimensional mode, and that overgrowth plays a key role in the merging of grains under a lateral overgrown c-plane surface.

Funder

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01693H

Reference25 articles.

1. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

2. Improve efficiency and long lifetime UVC LEDs with wavelengths between 230 and 237 nm

3. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

4. Strained GaN quantum-well FETs on single crystal bulk AlN substrates

5. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density

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