Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process-Reference-Cited by-同舟云学术

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Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process

Published:2023 Issue: Volume: Page:1-5
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sarkar Biplab¹^ORCID,Wang Jia²^ORCID,Watanabe Hirotaka³,Amano Hiroshi³^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttarakhand, India

2. Institute for Advanced Research (IAR), Nagoya University, Nagoya, Japan

3. Institute of Materials and Systems for Sustainability (IMaSS), Center for Integrated Research of Future Electronics (CIRFE), Nagoya University, Nagoya, Japan

Funder

Japan Science and Technology Agency (JST) through the Advanced International Collaborative Research Program

Japanese Society for the Promotion of Science

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10366212.pdf?arnumber=10366212

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