The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices-Reference-Cited by-同舟云学术

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Published:2021-05-31 Issue:22 Volume:118 Page:222104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu Kai¹^ORCID,Fu Houqiang²^ORCID,Deng Xuguang¹,Su Po-Yi³^ORCID,Liu Hanxiao³^ORCID,Hatch Kevin³,Cheng Chi-Yin¹,Messina Daniel³^ORCID,Meidanshahi Reza Vatan¹,Peri Prudhvi⁴^ORCID,Yang Chen¹^ORCID,Yang Tsung-Han¹,Montes Jossue¹,Zhou Jingan¹^ORCID,Qi Xin¹^ORCID,Goodnick Stephen M.¹,Ponce Fernando A.³^ORCID,Smith David J.³,Nemanich Robert³^ORCID,Zhao Yuji¹

Affiliation:

1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

2. Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

4. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA

Funder

Advanced Research Projects Agency - Energy

National Aeronautics and Space Administration

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing