Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111648
Reference21 articles.
1. Defects, optical absorption and electron mobility in indium and gallium nitrides
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Metal contacts to gallium nitride
4. Ultraviolet and violet light‐emitting GaN diodes grown by low‐pressure metalorganic chemical vapor deposition
5. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
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