Universal relation for the orientation of dislocations from prismatic slip systems in hexagonal and rhombohedral strained heterostructures
Author:
Affiliation:
1. Felix Bloch Institute for Solid State Physics, Universität Leipzig, Linnéstr. 5, 04103 Leipzig, Germany
Funder
European Social Fund
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5140977
Reference12 articles.
1. Perfect Dislocations in the Wurtzite Lattice
2. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
3. High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
4. Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
5. Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
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3. Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt;Journal of Materials Research;2021-09-22
4. Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3;Materials Advances;2021
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