Plastic strain relaxation and alloy instability in epitaxial corundum-phase (Al,Ga)2O3 thin films on r-plane Al2O3
Author:
Affiliation:
1. Universität Leipzig
2. Felix Bloch Institute for Solid State Physics
3. Linnéstr. 5
4. D-04103 Leipzig
5. Germany
6. Fraunhofer Institute for Microstructure of Materials and Systems IMWS
7. Walter-Huelse-Strasse 1
8. D-06120 Halle
Abstract
The growth of (AlxGa1−x)2O3 alloy thin films in the corundum phase on r-plane (01.2) Al2O3 substrates is investigated.
Funder
Sächsische Aufbaubank
Universität Leipzig
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science,Chemistry (miscellaneous)
Link
http://pubs.rsc.org/en/content/articlepdf/2021/MA/D1MA00204J
Reference40 articles.
1. Gallium Oxide: Crystal Growth, Materials Properties, and Devices , ed. M. Higashiwaki and S. Fujita , Springer , Cham , 2020
2. Materials issues and devices of α- and β-Ga2O3
3. Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques
4. Control of phase formation of (AlxGa1 − x)2O3 thin films on c-plane Al2O3
5. Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction
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