Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4998804
Reference25 articles.
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2. Analogies in the Gallia and Alumina Systems. The Preparation and Properties of Some Low-Alkali Gallates1
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