Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques-Reference-Cited by-同舟云学术

Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques

Published:2018-03-07 Issue:5 Volume:6 Page:268-275
ISSN:2166-3831
Container-title:Materials Research Letters
language:en
Short-container-title:Materials Research Letters

Author:

Yao Yao¹^ORCID,Okur Serdal²,Lyle Luke A. M.¹^ORCID,Tompa Gary S.²,Salagaj Tom²,Sbrockey Nick²,Davis Robert F.¹,Porter Lisa M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA

2. Structured Materials Industries, Inc., Piscataway, NJ, USA

Funder

Office of Naval Research

National Science Foundation

Carnegie Mellon University

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/21663831.2018.1443978

Reference35 articles.

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2. Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

3. Tamura Corporation. Single-crystal gallium oxide substrates; 2017 [cited 2017 Aug 28]. Available from: http://www.tamura-ss.co.jp/en/products/gao/index.html.

4. Polymorphism of Ga2O3 and the System Ga2O3—H2O

5. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

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