High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design-Reference-Cited by-同舟云学术

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High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design

Published:2014-10-27 Issue:17 Volume:105 Page:171106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Becerra Daniel L.¹,Zhao Yuji¹,Oh Sang Ho²,Pynn Christopher D.¹,Fujito Kenji³,DenBaars Steven P.¹²,Nakamura Shuji¹²

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

3. Optoelectronic Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

Funder

Solid State Lighting and Energy Center

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900793

Reference20 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. Auger recombination in InGaN measured by photoluminescence

3. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Effects of macroscopic polarization in III-V nitride multiple quantum wells

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4. Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect;Results in Physics;2022-03

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