Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
Author:
Affiliation:
1. ITMO University, St. Petersburg 197101, Russia
2. Materials Department, UCSB, Santa Barbara, California 93106, USA
3. Ioffe Physical-Technical Institute RAS, St. Petersburg 194021, Russia
Funder
King Abdullah University of Science and Technology (KAUST)
King Abdulaziz City for Science and Technology (KACST)
Russian Science Foundation (RSF)
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4939907
Reference25 articles.
1. Optical and structural properties of InGaN light-emitters on non-polar and semipolar GaN
2. Strain-induced polarization in wurtzite III-nitride semipolar layers
3. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
4. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
5. InGaN based green laser diodes on semipolar GaN substrate
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