Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics-Reference-Cited by-同舟云学术

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Published:2016-02-15 Issue:7 Volume:108 Page:072901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Roberts J. W.¹,Chalker P. R.¹,Lee K. B.²,Houston P. A.²,Cho S. J.³,Thayne I. G.³^ORCID,Guiney I.⁴,Wallis D.⁴,Humphreys C. J.⁴^ORCID

Affiliation:

1. Centre for Materials and Structures, University of Liverpool, Liverpool L69 3GH, United Kingdom

2. Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

3. School of Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom

4. Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942093

Reference29 articles.

1. Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices

2. Guest Editorial Special Issue on GaN Electronic Devices

3. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

4. Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

5. Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

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