Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors-Reference-Cited by-同舟云学术

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Published:2013-07-15 Issue:3 Volume:103 Page:033524
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yuhao,Sun Min,Joglekar Sameer J.,Fujishima Tatsuya,Palacios Tomás

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4815923

Reference22 articles.

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2. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

3. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

4. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

5. Tri-Gate Normally-Off GaN Power MISFET

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