Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT-Reference-Cited by-同舟云学术

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Impact of post-deposition anneal on ALD Al2O3/etched GaN interface for gate-first MOSc-HEMT

Published:2023-03 Issue: Volume:4 Page:100033
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Fernandes Paes Pinto Rocha P.^ORCID,Vauche L.,Mohamad B.,Vandendaele W.,Martinez E.,Veillerot M.,Spelta T.,Rochat N.,Gwoziecki R.,Salem B.,Sousa V.

Publisher

Elsevier BV

Reference24 articles.

1. Synthesis, characterization and insights into stable and well organized hexagonal mesoporous zinc-doped alumina as promising metathesis catalysts carrier;Abidli;Dalton Transactions,2015

2. Impact of gate electrode formation process on Al₂O₃/GaN interface properties and channel mobility;Ando;Applied Physics Express,2021

3. Fabrication of enhancement-mode AlGaN/GaN MISHEMTs by using fluorinated Al₂O₃ as gate dielectrics;Chen;IEEE Electron Device Letters,2011

4. The origin of negative charging in amorphous Al₂O₃ films: The role of native defects;Dicks;Nanotechnology,2019

5. Effect of post-deposition annealing on the interface electronic structures of Al₂O₃-Capped GaN and GaN/AlGaN/GaN heterostructure;Duan;ECS Journal of Solid State Science and Technology,2015

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Al₂O₃ thickness and oxidant precursors on the interface composition and contamination in Al₂O₃/GaN structures;Surface and Interface Analysis;2024-03-03

2. Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors;Micromachines;2024-02-25

3. Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors;Advanced Electronic Materials;2023-12-07

4. Post-deposition annealing challenges for ALD Al0.5Si0.5Ox/n-GaN MOS devices;Solid-State Electronics;2023-11

5. Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach;Journal of Vacuum Science & Technology B;2023-04-19

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