Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

Published:2014-01 Issue:1 Volume:35 Page:014008
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wang Chong,Chen Chong,He Yunlong,Zheng Xuefeng,Ma Xiaohua,Zhang Jincheng,Mao Wei,Hao Yue

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=1/a=014008/pdf

Reference12 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. 0.25 $\mu\hbox{m}$ Self-Aligned AlGaN/GaN High Electron Mobility Transistors

3. Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode

4. Field plated 0.15 μm GaN HEMTs for millimeter-wave application

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of High Electron Mobility Transistor for Biological Sensors;Lecture Notes in Electrical Engineering;2024

2. Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications;Physica Scripta;2023-09-14

3. Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study;Communications in Computer and Information Science;2019

4. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer;Nanoscience and Nanotechnology Letters;2018-02-01

5. Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse;Solid-State Electronics;2017-11

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