Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-13-5950-7_33
Reference23 articles.
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2. Ambacher, O., et al.: Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85(6), 3222–3233 (1999)
3. Palacios, T., Suh, C.S., Chakraborty, A., Keller, S., DenBaars, S.P., Mishra, U.K.: High-performance E-mode AlGaN/GaN HEMTs. IEEE Electron Device Lett. 27(6), 428–430 (2006)
4. Wu, J., Lu, W., Paul, K.L.: Normally-OFF AlGaN/GaN MOS-HEMT with a two-step gate recess. In: 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, pp. 594–596. IEEE (2015)
5. Hahn, H., et al.: First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET. Semicond. Sci. Technol. 27(5), 055004 (2012)
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