Study of High Electron Mobility Transistor for Biological Sensors
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-0154-4_19
Reference22 articles.
1. A.S.A. Fletcher, D. Nirmal, A survey of Gallium Nitride HEMT for RF and high-power applications. Superlattices Microstruct.Microstruct. 109, 519–537 (2017). https://doi.org/10.1016/j.spmi.2017.05.042
2. S.K. Dubey, M. Mishra, A. Islam, Characterization of AlGaN/GaN based HEMT for low noise and high frequency application. Int. J. Numer. Modell. Electron. Netw. Dev. Fields 35(1), e2932, 1–12 (2021). https://doi.org/10.1002/jnm.2932
3. S.K. Dubey, A. Islam, Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications. Physica Scripta 97(3), 034003 (2022). https://doi.org/10.1088/1402-4896/ac50c3
4. S.K. Dubey, A. Islam, Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications. Microsyst. Tecnol. (2022). https://doi.org/10.1007/s00542-022-05362-0
5. V. Hemaja, D.K. Panda, A comprehensive review on high electron mobility transistor (HEMT) based biosensors: recent advances and future prospects and its comparison with Si-based biosensor. SILICON 14, 1873–1886 (2022). https://doi.org/10.1007/s12633-020-00937-w
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