Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
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3. InGaN channel high-electron mobility transistors with AlGaN barrier and fT/fmax of 260/220GHz;Wang;Appl Phys Express,2013
4. Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack;Arulkumaran;Appl Phys Express,2013
5. Suemitsu T et al. A new process approach for slant field plates in GaN-based high-electron-mobility transistors. Jpn J Appl Phys 2016;55:01AD02.
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2. Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing;IEEE Open Journal of Nanotechnology;2023
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4. High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure;Semiconductor Science and Technology;2020-06-02
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