Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack-Reference-Cited by-同舟云学术

Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

Published:2013-01-01 Issue:1 Volume:6 Page:016501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Arulkumaran Subramaniam,Ng Geok Ing,Vicknesh Sahmuganathan,Wang Hong,Ang Kian Siong,Kumar Chandramohan Manoj,Teo Khoon Leng,Ranjan Kumud

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=1/a=016501/pdf

Reference15 articles.

1. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

2. First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

3. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

4. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates

5. Improved Power Device Figure-of-Merit ($4.0\times 10^{8}$ V$^{2}$ $\Omega^{-1}$ cm$^{-2}$) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

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