Atomic-layer etching of GaN by using an HBr neutral beam-Reference-Cited by-同舟云学术

Atomic-layer etching of GaN by using an HBr neutral beam

Published:2020-05 Issue:3 Volume:38 Page:032603
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Ohori Daisuke¹^ORCID,Sawada Takahiro¹,Sugawara Kenta²,Okada Masaya²,Nakata Ken²,Inoue Kazutaka²,Sato Daisuke³,Kurihara Hideyuki³,Samukawa Seiji¹⁴^ORCID

Affiliation:

1. Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

2. Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan

3. Showa Denko K.K., 5-1 Ohgimachi, Kawasaki-ku, Kawasaki, Kanagawa 210-0867, Japan

4. Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000126

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