Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357800
Reference11 articles.
1. Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells
2. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence
3. Photoluminescence characterization of pseudomorphic modulation‐doped quantum wells at high carrier sheet densities
4. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells
5. Correlation between photoluminescence data and device performance of p-channel strained-layer materials
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1. Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2018-03
2. Room temperature photoluminescence evaluation of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor structures;Solid-State Electronics;2007-01
3. Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence;Journal of Applied Physics;1999-07-15
4. Photoelectric emission and conductance studies on fully fabricated PHEMTs;Solid-State Electronics;1995-09
5. Photoluminescence evaluation of pseudomorphic high electron mobility transistor device waters;Journal of Electronic Materials;1994-12
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