Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence-Reference-Cited by-同舟云学术

Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence

Published:1999-07-15 Issue:2 Volume:86 Page:914-917
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Brierley Steven K.,Torabi Abbas,Lyman Peter S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370823

Reference8 articles.

1. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells

2. Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells

3. Photoluminescence characterization of pseudomorphic modulation‐doped quantum wells at high carrier sheet densities

4. Quantitative characterization of modulation‐doped strained quantum wells through line‐shape analysis of room‐temperature photoluminescence spectra

5. Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence

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4. Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy;Journal of Communications Technology and Electronics;2013-03

5. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures;Semiconductors;2011-05