Photoluminescence characterization of pseudomorphic modulation‐doped quantum wells at high carrier sheet densities
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105714
Reference11 articles.
1. Photoluminescence study of undoped and modulation-doped pseudomorphicAlyGa1−yAs/InxGa1−xAS/AlyGa1−yAs single quantum wells
2. Photoluminescence studies of pseudomorphic modulation‐doped AlGaAs/InGaAs/GaAs quantum wells
3. Photoluminescence and electroreflectance studies of modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells
4. Interaction of magnetoexcitons and two-dimensional electron gas in the quantum Hall regime
5. Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures
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1. Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
2. Local cathodoluminescent study of the multilayers semiconductors nanostructures;Journal of Materials Science: Materials in Electronics;2008-01-20
3. Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging;Semiconductors;2007-04
4. Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer;Journal of Crystal Growth;2001-10
5. Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects;Semiconductor Physics, Quantum Electronics and Optoelectronics;2000-03-21
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