Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer-Reference-Cited by-同舟云学术

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Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

Published:2001-10 Issue:4 Volume:231 Page:520-524
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cao Xin,Zeng Yiping,Kong Meiying,Pan Liang,Wang Baoqiang,Zhu Zhanping,Wang Xiaoguang,Chang Yong,Chu Junhao

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Nondestructive determination of sheet carrier density in pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistor structures by room-temperature photoluminescence spectra

2. Photoluminescence characterization of pseudomorphic modulation‐doped quantum wells at high carrier sheet densities

3. Optical determination of carrier density in pseudomorphic AlGaAs/InGaAs/GaAs hetero‐field‐effect transistor structures by photoluminescence

4. Effect of an electric field on the luminescence of GaAs quantum wells

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time dependence of negative and positive photoconductivity for Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well under various temperatures and various incident photon energies and intensities;Nanotechnology;2021-01-11

2. Electron Effective Mass and Momentum Relaxation Time in One-Sided δ-Doped PHEMT AlGaAs/InGaAs/GaAs Quantum Wells with High Electron Density;Technical Physics Letters;2018-12

3. Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors;Journal of Crystal Growth;2015-09

4. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures;Semiconductors;2011-05

5. Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates;Journal of Luminescence;2011-01

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