Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots-Reference-Cited by-同舟云学术

Electronic band structure and optical gain of GaNxBiyAs1−x−y/GaAs pyramidal quantum dots

Published:2016-04-14 Issue:14 Volume:119 Page:143103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Song Zhi-Gang¹²,Bose Sumanta¹³,Fan Wei-Jun¹³,Li Shu-Shen²

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

3. NOVITAS, Centre for Micro-/Nano-electronics, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

Funder

Ministry of Education - Singapore (MOE)

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945700

Reference23 articles.

1. Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi

2. Molecular beam epitaxy growth of GaAsBi using As2 and As4

3. Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

4. Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

5. Spatial correlation between Bi atoms in diluteGaAs1−xBix: From random distribution to Bi pairing and clustering

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