Molecular beam epitaxy growth of GaAsBi using As2 and As4-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth of GaAsBi using As2 and As4

Published:2014-03 Issue: Volume:390 Page:120-124
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Richards Robert D.,Bastiman Faebian,Hunter Christopher J.,Mendes Danuta F.,Mohmad Abdul R.,Roberts John S.,David John P.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Absorption characteristics of GaAs1−xBix/GaAs diodes in the near-infrared;Hunter;IEEE Photonics Technol. L,2012

2. Spin lifetime measurements in GaAsBi thin films;Pursley;Appl. Phys. Lett.,2013

3. Bismide-nitride alloys: promising for efficient light emitting devices in the near- and mid-infrared;Sweeney;J. Appl. Phys.,2013

4. Molecular beam epitaxy growth of GaAs1−xBix;Tixier;Appl. Phys. Lett.,2003

5. Bismuth incorporation in GaAs1−xBix grown by molecular beam epitaxy with in-situ light scattering;Young;Phys. Status Solidi C,2007

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1. Understanding Growth‐Faulted GaAsBi Samples by Reflectance Anisotropy Spectroscopy;physica status solidi (b);2023-11-23

2. Negative thermal quenching in optically pumped GaAsBi–GaAs heterojunction p–i–n diode;Applied Physics A;2023-08

3. Opto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic Applications;Solid State Phenomena;2023-05-30

4. Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods;Journal of Crystal Growth;2022-07

5. Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature;Journal of Nanomaterials;2022-06-06

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