Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy within-situ light scattering-Reference-Cited by-同舟云学术

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Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy within-situ light scattering

Published:2007-04 Issue:5 Volume:4 Page:1707-1710
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Young E. C.,Whitwick M. B.,Tiedje T.,Beaton D. A.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference13 articles.

1. Band gap of GaAs1−xBix, 0

2. Giant Spin-Orbit Bowing inGaAs1−xBix

3. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy

4. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x

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