Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Band gap of GaAs1−xBix, 0
2. Giant Spin-Orbit Bowing inGaAs1−xBix
3. Molecular beam epitaxy growth of GaAs1−xBix
4. Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
5. Growth and in vivo STM of III-V Compound Semiconductors
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