Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix-Reference-Cited by-同舟云学术

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Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix

Published:2008-05-12 Issue:19 Volume:92 Page:192110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lu X.,Beaton D. A.,Lewis R. B.,Tiedje T.,Whitwick M. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2918844

Reference8 articles.

1. Molecular beam epitaxy growth of GaAs1−xBix

2. Valence band anticrossing in GaBixAs1−x

3. GaBiAs: A material for optoelectronic terahertz devices

4. A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy

5. Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs

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2. Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys;Applied Physics Letters;2024-04-08

3. Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfaces;Journal of Applied Physics;2024-03-27

4. Semi-empirical growth model of InSbBi grown by molecular beam epitaxy;Materials Science and Engineering: B;2024-02

5. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024

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