Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2918844
Reference8 articles.
1. Molecular beam epitaxy growth of GaAs1−xBix
2. Valence band anticrossing in GaBixAs1−x
3. GaBiAs: A material for optoelectronic terahertz devices
4. A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy
5. Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs
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