Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Interaction of Ga and As2 Molecular Beams with GaAs Surfaces
2. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique
3. Effect of arsenic dimer/tetramer ratio on stability of III–V compound surfaces grown by molecular beam epitaxy
4. Thermodynamic analysis of GaAs growth by molecular beam epitaxy at the surface structure transition from 3 × 1 to 4 × 2
5. The Technology and Physics of Molecular Beam Epitaxy;Davies,1985
Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency;Japanese Journal of Applied Physics;2021-01-15
2. Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers;Optoelectronics, Instrumentation and Data Processing;2020-09
3. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires;Nanotechnology;2020-08-25
4. The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy;Semiconductors;2019-04
5. Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing;Surface Science;2018-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3