Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1<b>−</b>x<b>−</b>yNxBiy alloys-Reference-Cited by-同舟云学术

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1−x−yNxBiy alloys

Published:2024-04-08 Issue:15 Volume:124 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Mitchell J. W.¹^ORCID,Greenhill C. M.²^ORCID,Huang T.-Y.²^ORCID,Jen T.²^ORCID,Yang Y.-C.²^ORCID,Hammond K.²,Heyman J. N.³^ORCID,Goldman R. S.¹²^ORCID

Affiliation:

1. Applied Physics, University of Michigan 1 , Ann Arbor, Michigan 48109, USA

2. Department of Materials Science and Engineering, University of Michigan 2 , Ann Arbor, Michigan 48109, USA

3. Department of Physics and Astronomy, Macalester College 3 , St. Paul, Minnesota 55105, USA

Abstract

We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035.

Funder

National Science Foundation

Horace H. Rackham School of Graduate Studies, University of Michigan

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0187750/19875220/152108_1_5.0187750.pdf

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