Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.115203/fulltext
Reference19 articles.
1. A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
2. 1-eV solar cells with GaInNAs active layer
3. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
5. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
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