Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371763
Reference21 articles.
1. Electronic properties of two-dimensional systems
2. Surface roughness at the Si(100)-SiO2interface
3. Monte Carlo study of electron transport in silicon inversion layers
4. A comprehensive model for Coulomb scattering in inversion layers
5. SOI MOSFET effective channel mobility
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