Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications

Published:2021-01-06 Issue:2 Volume:13 Page:3387-3396
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yin Yiheng¹^ORCID,Zhang Zhaofu²,Zhong Hongxia³,Shao Chen¹,Wan Xuhao¹,Zhang Can¹,Robertson John¹²,Guo Yuzheng¹

Affiliation:

1. School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China

2. Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom

3. School of Physical Science and Technology, Wuhan University, Wuhan, Hubei 430072, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c18767

Reference61 articles.

1. International Technology Roadmap for Semiconductors, www.itrs.net, 2013.

2. International Technology Roadmap for Semiconductors, www.itrs.net, 2015.

3. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

4. Diameter Dependence of Leakage Current in Nanowire Junctionless Field Effect Transistors

5. Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics;Journal of Materials Science & Technology;2024-12

2. Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit;Computational Materials Today;2024-09

3. Polythiophene-based organic transistors：Time to a single nanowire and sub-5 nm gate length;Physica E: Low-dimensional Systems and Nanostructures;2024-08

4. High-Performance One-Dimensional Sub-5 nm Transistors Based on Poly(p-phenylene ethynylene) Molecular Wires;Molecules;2024-07-05

5. SiX₂ (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications;Nano Letters;2024-05-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3