High-Performance One-Dimensional Sub-5 nm Transistors Based on Poly(p-phenylene ethynylene) Molecular Wires

Abstract

Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices. Here, the approach called first-principles quantum transport is utilized to investigate the PPE molecular wire field-effect transistor (FET) efficiency limit through the geometry of the gate-all-around (GAA) instrument. It is observed that the n-type GAA PPE molecular wire FETs with a suitable gate length (Lg = 5 nm) and underlap (UL = 1, 2, 3 nm) can gratify the on-state current (Ion), power dissipation (PDP), and delay period (τ) concerning the conditions in 2028 to achieve the higher performance (HP) request of the International Roadmap for Device and Systems (IRDS, 2022 version). In contrast, the p-type GAA PPE molecular wire FETs with Lg = 5, 3 nm, and UL of 1, 2, 3 nm could gratify the Ion, PDP, and τ concerning the 2028 needs to achieve the HP request of the IRDS in 2022, while Lg = 5 and UL = 3 nm could meet the Ion and τ concerning the 2028 needs to achieve the LP request of the IRDS in 2022. More importantly, this is the first one-dimensional carbon-based ambipolar FET. Therefore, the GAA PPE molecular wire FETs could be a latent choice to downscale Moore’s law to 3 nm.