Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals-Reference-Cited by-同舟云学术

Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals

Published:2023-10 Issue:10 Volume:70 Page:5462-5468
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Xu-Dong¹,Liu Qian²,Xie Hai-Qing²^ORCID,Deng Xiao-Qing²,Fan Zhi-Qiang²^ORCID,Wu Dan²,Chen Ke-Qiu³

Affiliation:

1. School of Physics and Electronic Science and the Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha, China

2. School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha, China

3. Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10237123.pdf?arnumber=10237123

Reference45 articles.

1. Dangling bonds and magnetism of grain boundaries in graphene

2. Nanotubes based on monolayer blue phosphorus

3. Thermal Conductivity of Amorphous Materials

4. Thermal properties of black and blue phosphorenes from a first-principles quasiharmonic approach

5. Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects

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