Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects-Reference-Cited by-同舟云学术

Enhancement of tunneling current in phosphorene tunnel field effect transistors by surface defects

Published:2018 Issue:8 Volume:20 Page:5699-5707
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lu Juan¹²³⁴⁵,Fan Zhi-Qiang⁵⁶⁷⁸⁴^ORCID,Gong Jian¹²³⁴,Chen Jie-Zhi⁹¹⁰¹¹⁴,ManduLa Huhe¹²¹³¹⁴⁴,Zhang Yan-Yang⁵⁶⁷⁸⁴,Yang Shen-Yuan⁵⁶⁷⁸⁴,Jiang Xiang-Wei⁵⁶⁷⁸⁴

Affiliation:

1. School of Physics and Technology

2. Inner Mongolia University

3. Hohhot 010021

4. P. R. China

5. State Key Laboratory of Superlattices and Microstructures

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing 100083

9. School of Information Science and Engineering

10. Shandong University

11. Jinan

12. School of Physics

13. Jining Normal University

14. Jining 010021

Abstract

The effects of the staggered double vacancies, hydrogen (H), 3d transition metals, for example cobalt, and semiconductor covalent atoms, for example, germanium, nitrogen, phosphorus (P) and silicon adsorption on the transport properties of monolayer phosphorene were studied using density functional theory and non-equilibrium Green's function formalism.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP08678D

Reference39 articles.

1. Spin filtering effect and magnetoresistance in zigzag 6, 6, 12-graphyne nanoribbon system

2. Two-dimensional materials and their prospects in transistor electronics