Diameter Dependence of Leakage Current in Nanowire Junctionless Field Effect Transistors-Reference-Cited by-同舟云学术

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Diameter Dependence of Leakage Current in Nanowire Junctionless Field Effect Transistors

Published:2017-03 Issue:3 Volume:64 Page:1330-1335
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sahay Shubham^ORCID,Kumar Mamidala Jagadesh^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7862872/07820040.pdf?arnumber=7820040

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4. Revisiting Lateral-BTBT Gate-Induced Drain Leakage in Nanowire FETs for 1T-DRAM;IEEE Transactions on Electron Devices;2024-04

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