Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors-Reference-Cited by-同舟云学术

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Published:2022-09 Issue:9 Volume:69 Page:4777-4785
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Shuo¹^ORCID,Xie Hao¹^ORCID,Huang Jun Z.²^ORCID,Chen Wenchao³^ORCID,Liao Jie³^ORCID,Yin Wen-Yan³^ORCID

Affiliation:

1. School of Information and Electrical Engineering, Zhejiang University City College, Hangzhou, China

2. MaxLinear Inc., Carlsbad, CA, USA

3. Innovative Institute of Electromagnetic Information and Electronic Integration (EIEI), College of Information and Electronic Engineering, Zhejiang University, Hangzhou, China

Funder

National Natural Science Foundation of China

Science Challenge

Zhejiang Provincial Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09829422.pdf?arnumber=9829422

Reference36 articles.

1. Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

2. Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

3. Transport in Nanostructures

4. Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs

5. Effect of Strained $k \cdot p$ Deformation Potentials on Hole Inversion-Layer Mobility

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