Monte Carlo study of electron transport in silicon inversion layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.2244/fulltext
Reference141 articles.
1. Electronic properties of two-dimensional systems
2. Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands
3. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
4. High‐field drift velocity of electrons at the Si–SiO2interface as determined by a time‐of‐flight technique
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