Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4757932
Reference19 articles.
1. High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate
2. Development of enhancement mode AlN/GaN high electron mobility transistors
3. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
5. Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures
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1. Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions;Micro and Nanostructures;2023-05
2. Influence of Silicon-Doping in n-AlGaN Layer on the Optical and Electrical Performance of Deep Ultraviolet Light-Emitting Diodes;Russian Journal of Physical Chemistry A;2019-12
3. Effects of modulation doped n-AlGaN epilayers on the optoelectronic properties of 278-nm AlGaN-based flip-chip light-emitting devices;Journal of Materials Science: Materials in Electronics;2019-05-25
4. Enhanced electrical performance by modulation-doping in AlGaN-based deep ultraviolet light-emitting diodes;Modern Physics Letters B;2019-03-20
5. Review of bias-temperature instabilities at the III-N/dielectric interface;Microelectronics Reliability;2018-03
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