Development of enhancement mode AlN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3168648
Reference17 articles.
1. Self-heating study of an AlGaN∕GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
2. High-power characteristics of GaN/InGaN double heterojunction bipolar transistors
3. Microwave power SiC MESFETs and GaN HEMTs
4. Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT
5. Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
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1. Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz;Chinese Physics B;2023-10-01
2. Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT;Vacuum;2023-10
3. Threshold Voltage Analysis of E-mode Recessed p-GaN Gate HEMT-A Simulation Based Study;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
4. Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment;IEEE Electron Device Letters;2022-10
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